IRLI640G
Производится
Краткое описание:
200V N-Channel MOSFET, 9.9A ID, 180mR Rds On, TO-220
Дополнительная информация
N-channel power MOSFET featuring 200V drain-source voltage and 9.9A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 180mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 40W. Key switching characteristics include an 8ns turn-on delay and 52ns fall time.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.8mm |
| Length | 10.63mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 52ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 180mR |
| Package/Case | TO-220-3 |
| RoHS Compliant | No |
| Package Quantity | 50 |
| Input Capacitance | 1.8nF |
| Number of Channels | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 44ns |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 9.9A |
| Drain to Source Voltage (Vdss) | 200V |
