IRLL014TRPBF
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Краткое описание:
N-Channel MOSFET, 60V, 2.7A, 200mR, SOT-223
Дополнительная информация
N-Channel Power MOSFET, 60V Drain-Source Voltage, 2.7A Continuous Drain Current, and 200mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-261AA (SOT-223) surface mount package, 2W power dissipation, and 400pF input capacitance. Optimized for switching applications with fast turn-on (9.3ns) and turn-off (17ns) delay times, it operates from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.8mm |
| Length | 6.7mm |
| Weight | 0.008826oz |
| Current | 2A |
| Voltage | 55V |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 200mR |
| Nominal Vgs | 1V |
| Package/Case | SOT-223 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 400pF |
| Power Dissipation | 2W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
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