IRLML5103TRPBF
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Краткое описание:
P-Channel MOSFET, 30V, 610mA, 600mR, SOT-23
Дополнительная информация
P-Channel, Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current of 610mA. Offers a low on-state resistance of 600mR. Packaged in a compact SOT-23 surface-mount case with dimensions of 3.04mm length, 1.4mm width, and 1.02mm height. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 540mW. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.02mm |
| Length | 3.04mm |
| Lead Free | Lead Free |
| Nominal Vgs | -1V |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | -610mA |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Input Capacitance | 75pF |
| Threshold Voltage | -1V |
| Turn-On Delay Time | 10ns |
| Dual Supply Voltage | -30V |
| On-State Resistance | 600mR |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 540mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 610mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 600mR |
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