IRLR014PBF
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Краткое описание:
N-Channel MOSFET, 60V, 7.7A, 200mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, DPAK package, featuring 60V drain-source voltage and 7.7A continuous drain current. Offers a low 200mΩ maximum drain-source on-resistance at a nominal 2V gate-source voltage. This silicon Metal-oxide Semiconductor FET boasts a 2.5W maximum power dissipation and is RoHS compliant. Ideal for surface mount applications, it exhibits fast switching characteristics with a 9.3ns turn-on delay and 26ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Nominal Vgs | 2V |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 400pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
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