IRLR024NTRLPBF
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Краткое описание:
N-Channel MOSFET, 55V, 17A, 65mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, DPAK package, featuring 55V drain-source voltage and 17A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.08-ohm Rds On at a nominal 2V Vgs, with a maximum power dissipation of 45W. Designed for surface mounting, it operates from -55°C to 175°C and includes fast switching characteristics with a 7.1ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | HEXFET® |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Nominal Vgs | 2V |
| Package/Case | DPAK |
| Current Rating | 17A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Package Quantity | 3000 |
| Input Capacitance | 480pF |
| Power Dissipation | 45W |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.1ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 55V |
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