IRLR120TRPBF
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Краткое описание:
MOSFET N-CH 100V 7.7A 270mR DPAK T/R
Дополнительная информация
N-Channel MOSFET transistor featuring 100V drain-source voltage and 7.7A continuous drain current. This component offers a maximum drain-source on-resistance of 270mR at 10V gate-source voltage. Designed for surface mount or through-hole applications, it is packaged in a DPAK case and supplied on tape and reel. Key switching characteristics include a 9.8ns turn-on delay and 21ns turn-off delay, with a 27ns fall time. Operating temperature range spans from -55°C to 150°C with a 2.5W power dissipation.
| RoHS | Compliant |
| Mount | Through Hole, Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 270mR |
| Package/Case | DPAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 490pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 270mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 270mR |
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