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N-Channel MOSFET, 60V, 10A, 200mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, TO-220-3 package, featuring 60V drain-source breakdown voltage and 10A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 200mΩ drain-source on-resistance. With a maximum power dissipation of 43W and operating temperatures from -55°C to 175°C, it includes fast switching characteristics with turn-on delay of 9.3ns and fall time of 26ns. Designed for through-hole mounting, this 1-element transistor has an input capacitance of 400pF.
| RoHS | Not CompliantNo |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 9.01mm |
| Length | 10.41mm |
| Weight | 0.211644oz |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 200mR |
| Package/Case | TO-220-3 |
| Current Rating | 10A |
| RoHS Compliant | No |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Input Capacitance | 400pF |
| Number of Channels | 1 |
| Turn-On Delay Time | 9.3ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 17ns |
| Max Power Dissipation | 43W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 200mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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