IRLZ44SPBF
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Краткое описание:
N-Channel MOSFET, 60V, 50A, 28mR Rds On, TO-263
Дополнительная информация
N-Channel Power MOSFET, featuring a 60V drain-source voltage and 50A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 28mΩ drain-source on-resistance. Designed for surface mounting in a TO-263-3 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 17ns turn-on delay and 42ns turn-off delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.02mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Weight | 0.050717oz |
| Polarity | N-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 28mR |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 3.3nF |
| Power Dissipation | 3.7W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 3.7W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 28mR |
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