IS61NLF25618A-6.5B2I

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IS61NLF25618A-6.5B2I - Integrated Silicon Solution
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Краткое описание: SRAM 4M-bit 256Kx18 Sync 6.5ns 3.3V 119-Pin BGA
Производитель Integrated Silicon Solution
Статус производства Производится (ACTIVE)

Дополнительная информация

Synchronous SRAM chip, 4M-bit density, organized as 256K words by 18 bits. Features a 6.5 ns maximum access time and operates at a maximum clock rate of 133 MHz with SDR data rate architecture. This dual-port memory utilizes a flow-through architecture and is housed in a 119-pin BGA package for surface mounting. Operates from a 3.3V supply voltage with a temperature range of -40°C to 85°C.
PCB 119
ECCN 3A991.b.2.a
PPAP No
Density 4Mbit
EU RoHS No
HTS Code 8542320041
Mounting Surface Mount
Cage Code 1J9V2
Pin Count 119
Automotive No
Lead Shape Ball
Schedule B 8542320040
Timing Type Synchronous
Architecture Flow-Through
Package/Case BGA
AEC Qualified No
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1.27
Density in Bits 4194304bit
Number of Ports 2
Number of Words 256K
Package Material Plastic
Address Bus Width 18bit
Basic Package Type Ball Grid Array
Maximum Clock Rate 133MHz
Package Width (mm) 14.2(Max)
Maximum Access Time 6.5ns
Package Description Plastic Ball Grid Array
Package Family Name BGA
Package Height (mm) 1.7(Max)
Package Length (mm) 22.2(Max)
Radiation Hardening No
Data Rate Architecture SDR
Number of Bits per Word 18bit
Seated Plane Height (mm) 2.41(Max)
Max Operating Temperature 85°C
Maximum Operating Current 180mA
Min Operating Temperature -40°C
Max Operating Supply Voltage 3.35V
Min Operating Supply Voltage 3.25V
Typical Operating Supply Voltage 3.3V

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