IS61NVF25618A-6.5B3

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IS61NVF25618A-6.5B3 - Integrated Silicon Solution
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Краткое описание: 4M-bit 256Kx18 Sync SRAM, 6.5ns, 2.5V, 165-Pin BGA
Производитель Integrated Silicon Solution
Статус производства Производится (ACTIVE)

Дополнительная информация

Synchronous SRAM chip, 4M-bit density, 256K words x 18 bits, featuring a 6.5 ns maximum access time and 133 MHz maximum clock rate. This dual-port memory utilizes a flow-through architecture and SDR data rate. Packaged in a 165-pin BGA with a 15mm x 13mm footprint, it operates at 2.5V with a 175 mA maximum current.
PCB 165
ECCN 3A991.b.2.a
PPAP No
Density 4Mbit
EU RoHS No
HTS Code 8542320041
Mounting Surface Mount
Cage Code 1J9V2
Pin Count 165
Automotive No
Lead Shape Ball
Schedule B 8542320040
Timing Type Synchronous
Architecture Flow-Through
Package/Case BGA
AEC Qualified No
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1
Density in Bits 4194304bit
Number of Ports 2
Number of Words 256K
Package Material Plastic
Address Bus Width 18bit
Basic Package Type Ball Grid Array
Maximum Clock Rate 133MHz
Package Width (mm) 13
Maximum Access Time 6.5ns
Package Description Plastic Ball Grid Array
Package Family Name BGA
Package Height (mm) 0.79
Package Length (mm) 15
Radiation Hardening No
Data Rate Architecture SDR
Number of Bits per Word 18bit
Seated Plane Height (mm) 1.2(Max)
Max Operating Temperature 70°C
Maximum Operating Current 175mA
Min Operating Temperature 0°C
Max Operating Supply Voltage 2.55V
Min Operating Supply Voltage 2.45V
Typical Operating Supply Voltage 2.5V

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