ISP827-2
Производится
Увеличить
Краткое описание:
Transistor Output Optocoupler,
Дополнительная информация
Low-input-current phototransistor optocoupler provides two isolated NPN transistor output channels in an 8-pin DIP package. The device uses infrared emitting diodes optically coupled to silicon phototransistors and is rated for 5.3 kVrms input-to-output isolation. The ISP827-2 selection provides a minimum 50% current transfer ratio at 0.5 mA forward current and 0.4 V collector-emitter voltage. It supports 70 V minimum collector-emitter breakdown voltage, 50 mA input forward current, and operation from -30 °C to 100 °C. Tube packaging is used for the through-hole DIP8 version.
| REACH | unknown |
| Output type | NPN phototransistor |
| Fall time typ | 3µs |
| Military Spec | False |
| Mounting type | Through hole |
| Rise time typ | 4µs |
| Package / case | DIP-8 |
| Number of channels | 2 |
| Type of optocoupler | Phototransistor optically coupled isolator |
| Collector current max | 50mA |
| Operating temperature | -30 to 100°C |
| Input forward current max | 50mA |
| Input forward voltage max | 1.4V |
| Input forward voltage typ | 1.2V |
| Input reverse voltage max | 6V |
| Current transfer ratio min | 50 at IF=0.5 mA, VCE=0.4 V% |
| Input-output isolation voltage | 5300Vrms |
| Input-output isolation voltage peak | 7500Vpk |
| Input-output isolation resistance min | 5x10^10Ω |
| Collector-emitter breakdown voltage min | 70V |
| Emitter-collector breakdown voltage min | 6V |
| Collector-emitter saturation voltage max | 0.4V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
