ISP847-2
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Краткое описание:
Transistor Output Optocoupler,
Дополнительная информация
Low-input-current phototransistor optocoupler integrates four infrared emitting diodes with NPN silicon phototransistors in a 16-DIP plastic package. The device provides 5300 Vrms input-to-output isolation and a minimum 50% current transfer ratio at 0.5 mA forward current for the -2 selection. Output ratings include a 70 V collector-emitter breakdown voltage, 50 mA collector current, and 400 mV maximum saturation voltage for the -2 grade. The through-hole package operates from -30°C to 100°C and is supplied in tube packaging.
| REACH | unknown |
| Input Type | DC |
| Output Type | Phototransistor |
| Military Spec | False |
| Mounting Type | Through Hole |
| Package / Case | 16-DIP |
| Fall Time Typical | 3µs |
| Isolation Voltage | 5300Vrms |
| Rise Time Typical | 4µs |
| Number of Channels | 4 |
| Storage Temperature | -55 to 125°C |
| Operating Temperature | -30 to 100°C |
| Peak Isolation Voltage | 7500Vpk |
| Forward Current Maximum | 50mA |
| Forward Voltage Maximum | 1.4V |
| Forward Voltage Typical | 1.2V |
| Reverse Voltage Maximum | 6V |
| Collector Current Maximum | 50mA |
| Current Transfer Ratio Minimum | 50 at IF=0.5 mA, VCE=0.4 V% |
| Collector-Emitter Breakdown Voltage Minimum | 70V |
| Collector-Emitter Saturation Voltage Maximum | 0.4V |
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