IXA37IF1200HJ
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Краткое описание:
IGBT 1.2kV 58A 195W TO-247AD
Дополнительная информация
The IXA37IF1200HJ is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 58A. It has a maximum power dissipation of 195W and is packaged in a TO-247AD case with a through-hole mount. The transistor operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IXA37IF1200HJ has a reverse recovery time of 350ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.21mm |
| Height | 21.34mm |
| Length | 16.13mm |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-247AD |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Power Dissipation | 195W |
| Reach SVHC Compliant | No |
| Max Collector Current | 58A |
| Max Power Dissipation | 195W |
| Reverse Recovery Time | 350ns |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
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