IXFH69N30P
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Краткое описание:
300V 69A N-Channel MOSFET TO-247 49mR RdsOn
Дополнительная информация
N-Channel Power MOSFET, 300V Drain to Source Voltage (Vdss), 69A Continuous Drain Current (ID), and 49mR Drain to Source Resistance (Rds On Max). This silicon, metal-oxide semiconductor FET features a TO-247 package for through-hole mounting, a maximum power dissipation of 500W, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 27ns fall time, 25ns turn-on delay, and 75ns turn-off delay, with an input capacitance of 4.96nF and a gate-to-source voltage rating of 20V. This RoHS compliant component is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.3mm |
| Height | 21.46mm |
| Length | 16.26mm |
| Series | PolarHT™ HiPerFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 27ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 49mR |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 4.96nF |
| Power Dissipation | 500W |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 75ns |
| Max Power Dissipation | 500W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 49mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 69A |
| Drain to Source Voltage (Vdss) | 300V |
| Drain to Source Breakdown Voltage | 300V |
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