IXFH80N085

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IXFH80N085 - Ixys
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Краткое описание: 85V 80A N-Channel MOSFET TO-247 9mR RdsOn
Производитель Ixys
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET, TO-247 package, featuring 85V drain-source breakdown voltage and 80A continuous drain current. Offers a low 9mΩ drain-source on-resistance, 300W maximum power dissipation, and operates across a -55°C to 150°C temperature range. Includes a 31ns fall time and 95ns turn-off delay time, with 4.8nF input capacitance. Designed for through-hole mounting and RoHS compliant.
RoHS Compliant
Mount Through Hole
Series HiPerFET™
Polarity N-CHANNEL
Fall Time 31ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 9mR
Package/Case TO-247AD
RoHS Compliant Yes
Package Quantity 30
Input Capacitance 4.8nF
Power Dissipation 300W
Number of Elements 1
Radiation Hardening No
Turn-Off Delay Time 95ns
Max Power Dissipation 300W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 9mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Drain to Source Voltage (Vdss) 85V
Drain-source On Resistance-Max 9MR
Drain to Source Breakdown Voltage 85V

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