IXFN140N20P
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Краткое описание:
N-Channel MOSFET, 200V, 115A, 18mR Rds(on), Power FET
Дополнительная информация
N-Channel Power MOSFET, 200V Vdss, 115A Continuous Drain Current, and 18mΩ Max Drain-Source On-Resistance. Features include a 680W Max Power Dissipation, 175°C Max Operating Temperature, and 90ns Fall Time. This silicon Metal-oxide Semiconductor FET is designed for chassis or panel mounting in a SOT-227-4 package. It offers a 5V Threshold Voltage and 20V Gate-to-Source Voltage.
| RoHS | Compliant |
| Mount | Chassis Mount, Panel |
| Width | 25.42mm |
| Height | 9.6mm |
| Length | 38.23mm |
| Series | PolarHT™ |
| Polarity | N-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Box |
| Rds On Max | 18mR |
| Package/Case | SOT-227-4 |
| RoHS Compliant | Yes |
| Package Quantity | 10 |
| Input Capacitance | 7.5nF |
| Power Dissipation | 680W |
| Threshold Voltage | 5V |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 150ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 680W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 115A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 18MR |
| Drain to Source Breakdown Voltage | 200V |
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