IXFN180N20
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Краткое описание:
180A 200V N-Channel MOSFET, 10mR Rds On
Дополнительная информация
N-Channel Power MOSFET, 200V Vds, 180A Continuous Drain Current, 10mΩ Rds On Max. Features 700W Power Dissipation, 2.5kV Isolation Voltage, and a wide operating temperature range of -55°C to 150°C. Designed for chassis mounting with screw termination in a SOT-227-4 package. Includes 56ns fall time and 180ns turn-off delay.
| RoHS | Compliant |
| Mount | Chassis Mount, Screw |
| Series | HiPerFET™ |
| Weight | 0.046kg |
| Polarity | N-CHANNEL |
| Fall Time | 56ns |
| Packaging | Rail/Tube |
| Rds On Max | 10mR |
| Nominal Vgs | 4V |
| Termination | Screw |
| Package/Case | SOT-227-4 |
| RoHS Compliant | Yes |
| Package Quantity | 10 |
| Input Capacitance | 22nF |
| Isolation Voltage | 2.5kV |
| Power Dissipation | 700W |
| Threshold Voltage | 4V |
| Dual Supply Voltage | 200V |
| Turn-Off Delay Time | 180ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 700W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 10MR |
| Drain to Source Breakdown Voltage | 200V |
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