IXFN48N50
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Краткое описание:
500V 48A N-CH MOSFET, 100mR Rds(on), SOT-227B
Дополнительная информация
N-channel MOSFET with 500V drain-source breakdown voltage and 48A continuous drain current. Features 100mΩ maximum drain-source on-resistance and 520W maximum power dissipation. Designed for chassis mount with a SOT-227-4 package. Operates from -55°C to 150°C and includes lead-free and RoHS compliance.
| RoHS | Compliant |
| Mount | Chassis Mount, Screw |
| Series | HiPerFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 100mR |
| Nominal Vgs | 4V |
| Package/Case | SOT-227-4 |
| Current Rating | 48A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 10 |
| Input Capacitance | 8.4nF |
| Power Dissipation | 520W |
| Threshold Voltage | 4V |
| Dual Supply Voltage | 500V |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | Unknown |
| Max Power Dissipation | 520W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 100mR |
| Drain to Source Breakdown Voltage | 500V |
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