IXFN64N60P
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Краткое описание:
600V 50A N-Channel MOSFET, 96mR Rds(on), 700W, SOT-227
Дополнительная информация
N-Channel Power MOSFET, 600V Drain-Source Voltage, 50A Continuous Drain Current, and 96mΩ Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a 700W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Designed for chassis mounting in a SOT-227-4 MINIBLOC-4 plastic package, it offers a 24ns fall time and 79ns turn-off delay time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Chassis Mount |
| Series | PolarHV™ |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 96mR |
| Package/Case | SOT-227-4 |
| Current Rating | 64A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 10 |
| Input Capacitance | 12nF |
| Power Dissipation | 700W |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 79ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 700W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 96mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 96MR |
| Drain to Source Breakdown Voltage | 600V |
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