IXFN80N50P
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Краткое описание:
500V 66A N-Channel MOSFET, 65mR Rds(on), 700W, SOT-227
Дополнительная информация
N-Channel Power MOSFET, 500V Vds, 66A Continuous Drain Current, 65mΩ Max Drain-Source On-Resistance. Features 700W Max Power Dissipation, 150°C Max Operating Temperature, and 30V Gate-to-Source Voltage. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227-4 MINIBLOC-4 package, designed for chassis or panel mounting. Includes fast switching characteristics with 18ns fall time and 25ns turn-on delay.
| RoHS | Compliant |
| Mount | Chassis Mount, Panel |
| Width | 25.07mm |
| Height | 9.6mm |
| Length | 38.2mm |
| Series | PolarHV™ |
| Polarity | N-CHANNEL |
| Fall Time | 18ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 65mR |
| Package/Case | SOT-227-4 |
| Current Rating | 80A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 10 |
| Input Capacitance | 12.7nF |
| Power Dissipation | 700W |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 70ns |
| Max Power Dissipation | 700W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 65mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 66A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 55MR |
| Drain to Source Breakdown Voltage | 500V |
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