IXFR140N30P
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Краткое описание:
300V N-Channel MOSFET, 82A ID, 26mR Rds(on), Through Hole
Дополнительная информация
N-Channel Power MOSFET featuring 300V drain-to-source breakdown voltage and 82A continuous drain current. Offers a low 26mΩ drain-to-source resistance for efficient power handling. Designed with a 300W maximum power dissipation and a 3-pin ISOPLUS247 plastic package for through-hole mounting. Includes a 5V threshold voltage and 20V gate-to-source voltage rating.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | HiPerFET™, PolarP2™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 14.8nF |
| Isolation Voltage | 2.5kV |
| Power Dissipation | 300W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 26mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 82A |
| Drain to Source Voltage (Vdss) | 300V |
| Drain to Source Breakdown Voltage | 300V |
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