IXFV18N60PS
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Краткое описание:
600V 18A N-Channel MOSFET, 400mR Rds(on), SMD
Дополнительная информация
N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 400mΩ Rds On, 2.5nF input capacitance, and 5.5V threshold voltage. Designed for surface mount applications, it operates within a -55°C to 150°C temperature range with a maximum power dissipation of 360W. Key switching characteristics include a 22ns fall time and 62ns turn-off delay time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | HiPerFET™, PolarHT™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 400mR |
| Nominal Vgs | 5.5V |
| Termination | SMD/SMT |
| Package/Case | SMD/SMT |
| Current Rating | 18A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 2.5nF |
| Power Dissipation | 360W |
| Threshold Voltage | 5.5V |
| Dual Supply Voltage | 600V |
| Turn-Off Delay Time | 62ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 360W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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