IXFX30N100Q2
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Краткое описание:
1kV 30A N-Channel MOSFET, 400mR Rds On, TO-247
Дополнительная информация
N-channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a 1kV Drain to Source Breakdown Voltage and 1kV Drain to Source Voltage (Vdss). Offers a continuous drain current (ID) of 30A and a low Drain-source On Resistance-Max of 400mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 735W. Packaged in a TO-247-3 plastic housing for through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5.21mm |
| Height | 21.34mm |
| Length | 16.13mm |
| Series | HiPerFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 400mR |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 8.2nF |
| Power Dissipation | 735W |
| Turn-On Delay Time | 22ns |
| Turn-Off Delay Time | 60ns |
| Max Power Dissipation | 735W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 400MR |
| Drain to Source Breakdown Voltage | 1kV |
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