IXGP20N120A3
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Краткое описание:
IGBT GenX3 1.2kV 40A TO-220AB Through Hole
Дополнительная информация
The IXGP20N120A3 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 40A. It is packaged in a TO-220AB case and is suitable for through-hole mounting. The device has a maximum operating temperature range of -55°C to 150°C and a maximum power dissipation of 180W. It is compliant with RoHS regulations and is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | GenX3™ |
| Weight | 0.08113oz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-220AB |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Power Dissipation | 180W |
| Turn-On Delay Time | 16ns |
| Turn-Off Delay Time | 290ns |
| Reach SVHC Compliant | No |
| Max Collector Current | 40A |
| Max Power Dissipation | 180W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.3V |
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