IXTH5N100A
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N-Channel MOSFET, 1000V, 5A, 2R, TO-247AD
Дополнительная информация
N-Channel Power MOSFET featuring 1000V drain-source breakdown voltage and 5A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a maximum on-resistance of 2 ohms and a power dissipation of 180W. Designed for through-hole mounting in a TO-247AD package, it operates within a temperature range of -55°C to 150°C. Key electrical characteristics include 2.6nF input capacitance and fall/turn-off delay times of 30ns and 100ns respectively. This RoHS compliant component is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2R |
| Package/Case | TO-247AD |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1kV |
| Package Quantity | 30 |
| Input Capacitance | 2.6nF |
| Power Dissipation | 180W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Max Power Dissipation | 180W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 2.4R |
| Drain to Source Breakdown Voltage | 1kV |
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