IXTP7N60P
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Краткое описание:
600V N-Channel MOSFET, 7A ID, 1.1R Rds(on), TO-220
Дополнительная информация
N-Channel Power MOSFET, 600V Vds, 7A Continuous Drain Current (ID), and 1.1Ω Rds On. Features a TO-220 package for through-hole mounting, 150W maximum power dissipation, and operates from -55°C to 150°C. Includes fast switching characteristics with a 20ns turn-on delay and 26ns fall time. This silicon Metal-oxide Semiconductor FET is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.83mm |
| Height | 9.15mm |
| Length | 10.66mm |
| Series | PolarHV™ |
| Polarity | N-CHANNEL |
| Fall Time | 26ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1.1R |
| Package/Case | TO-220 |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 1.08nF |
| Power Dissipation | 150W |
| Turn-On Delay Time | 20ns |
| Turn-Off Delay Time | 65ns |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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