IXYK110N120A4
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Краткое описание:
Disc IGBT XPT Gen4 1200V 110A TO264
Дополнительная информация
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel.
| Weight | 10g |
| Feature | International Standard Package |
| Advantage | Low Gate Drive Requirement |
| Application | Inrush Current Protection Circuits |
| Package Type | TO-264 (IXYK) |
| Package Standard | International Standard Package |
| Pin Description C | Collector |
| Pin Description E | Emitter |
| Pin Description G | Gate |
| Pin Description Tab | Collector |
| Mounting Torque (M_d) | 1.13/10Nm/lb.in |
| Terminal Current Limit (I_LRMS) | 160A |
| Junction Temperature Range (T_J) | -55 ... +175°C |
| Collector-Emitter Voltage (V_CES) | 1200V |
| Storage Temperature Range (T_stg) | -55 ... +175°C |
| Maximum Junction Temperature (T_JM) | 175°C |
| Current Fall Time Typical (t_fi(typ)) | 300ns |
| Collector Current (I_C110) @ T_C=110°C | 110A |
| Gate-Emitter Voltage Max, Transient (V_GEM) | ±30V |
| Gate-Emitter Voltage Max, Continuous (V_GES) | ±20V |
| Reverse Bias Safe Operating Area (RBSOA) V_CE | 0.8 V_CESV |
| Thermal Resistance, Case to Heatsink (R_thCS) | 0.15 Typ°C/W |
| Thermal Resistance, Junction to Case (R_thJC) | 0.11 Typ°C/W |
| Total Power Dissipation Max (P_C) @ T_C = 25°C | 1360W |
| Collector-Emitter Saturation Voltage Max (V_CE(sat)) | 1.80V |
| Transconductance (g_fs) @ I_C=60A, V_CE=10V (Note 1) | 48 Min 80 TypS |
| Input Capacitance (C_ies) @ V_CE=25V, V_GE=0V, f=1MHz | 6030 TyppF |
| Output Capacitance (C_oes) @ V_CE=25V, V_GE=0V, f=1MHz | 340 TyppF |
| Pulsed Collector Current Max (I_CM) @ T_C = 25°C, 1ms | 900A |
| Gate-Emitter Leakage Current (I_GES) @ V_GE=±20V, V_CE=0V | ±200 MaxnA |
| Lead Soldering Temperature (T_L) @ 1.6mm from case for 10s | 300°C |
| Collector Current Max (I_C25) @ T_C = 25°C (Chip Capability) | 375A |
| Collector-Emitter Voltage Max (V_CES) @ T_J = 25°C to 175°C | 1200V |
| Turn-on Energy (E_on) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2) | 2.5 TypmJ |
| Collector-Emitter Cutoff Current (I_CES) @ V_CE=V_CES, V_GE=0V | 25 MaxμA |
| Gate-Emitter Threshold Voltage (V_GE(th)) @ I_C=3mA, V_CE=V_GE | 4.5 Min 6.5 TypV |
| Turn-on Energy (E_on) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2) | 4.4 TypmJ |
| Turn-off Energy (E_off) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2) | 8.4 TypmJ |
| Current Fall Time (t_fi) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2) | 300 Typns |
| Current Rise Time (t_ri) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2) | 36 Typns |
| Reverse Transfer Capacitance (C_res) @ V_CE=25V, V_GE=0V, f=1MHz | 225 TyppF |
| Turn-off Energy (E_off) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2) | 14.0 TypmJ |
| Current Fall Time (t_fi) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2) | 590 Typns |
| Current Rise Time (t_ri) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2) | 33 Typns |
| Gate-Emitter Charge (Q_ge) @ I_C=I_C110, V_GE=15V, V_CE=0.5*V_CES | 58 TypnC |
| Collector-Emitter Breakdown Voltage (BV_CES) @ I_C=250µA, V_GE=0V | 1200V |
| Total Gate Charge (Q_g(on)) @ I_C=I_C110, V_GE=15V, V_CE=0.5*V_CES | 305 TypnC |
| Gate-Collector Charge (Q_gc) @ I_C=I_C110, V_GE=15V, V_CE=0.5*V_CES | 148 TypnC |
| Turn-on Delay Time (t_d(on)) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2) | 42 Typns |
| Turn-on Delay Time (t_d(on)) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2) | 35 Typns |
| Turn-off Delay Time (t_d(off)) @ I_C=50A, V_GE=15V, T_J=25°C (Note 2) | 550 Typns |
| Collector-Gate Voltage Max (V_CGR) @ T_J = 25°C to 175°C, R_GE = 1MΩ | 1200V |
| Turn-off Delay Time (t_d(off)) @ I_C=50A, V_GE=15V, T_J=150°C (Note 2) | 700 Typns |
| Collector-Emitter Cutoff Current (I_CES) @ V_CE=V_CES, V_GE=0V, T_J=125°C | 500 MaxμA |
| Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=I_C110, V_GE=15V, T_J=25°C (Note 1) | 1.45 Typ 1.80 MaxV |
| Collector-Emitter Saturation Voltage (V_CE(sat)) @ I_C=I_C110, V_GE=15V, T_J=150°C (Note 1) | 1.60 TypV |
| Reverse Bias Safe Operating Area (RBSOA) Pulsed Collector Current (I_CM) @ V_GE=15V, T_VJ=125C, R_G=2Ω | 220A |
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