JANSD2N2906A
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Краткое описание:
PNP BJT Transistor 60V 0.6A 500mW TO-18
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 60V and a maximum DC collector current of 0.6A. This single-element transistor offers a maximum power dissipation of 500mW and operates within a temperature range of -65°C to 200°C. Housed in a 3-pin TO-18 metal package (TO-206-AA), it exhibits a minimum DC current gain of 40 across various collector current and voltage conditions.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| EU RoHS | No |
| Category | Bipolar Power |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 60991 |
| Pin Count | 3 |
| Automotive | No |
| Dose Level | 10 |
| Lead Shape | Through Hole |
| Schedule B | 8541210080 |
| Package/Case | TO-18 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Package Material | Metal |
| Basic Package Type | Through Hole |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-206-AA |
| Package Height (mm) | 5.33(Max) |
| Radiation Hardening | Yes |
| Package Diameter (mm) | 5.84(Max) |
| Minimum DC Current Gain | [email protected]@10V|40@1mA@10V|40@10mA@10V|40@150mA@10V|40@500mA@10V |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 0.6A |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector Base Voltage | 60V |
| Maximum Collector-Emitter Voltage | 60V |
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