JANSP2N2906AL

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JANSP2N2906AL - Microchip
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Краткое описание: PNP BJT Transistor 60V 0.6A 500mW TO-18
Производитель Microchip
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V collector-emitter voltage, 0.6A maximum DC collector current, and 500mW maximum power dissipation. Housed in a 3-pin TO-18 metal package with a maximum height of 5.33mm and diameter of 5.84mm. Operates across a wide temperature range from -65°C to 200°C.
PCB 3
ECCN EAR99
PPAP No
Type PNP
EU RoHS No
Category Bipolar Power
Material Si
Mounting Through Hole
Cage Code 60991
Pin Count 3
Automotive No
Dose Level 30
Lead Shape Through Hole
Schedule B 8541210080
Package/Case TO-18
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Material Metal
Basic Package Type Through Hole
Package Description Transistor Outline Package
Package Family Name TO-206-AA
Package Height (mm) 5.33(Max)
Radiation Hardening Yes
Package Diameter (mm) 5.84(Max)
Minimum DC Current Gain [email protected]@10V|40@1mA@10V|40@10mA@10V|40@150mA@10V|40@500mA@10V
Max Operating Temperature 200°C
Maximum Power Dissipation 500mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.6A
Maximum Emitter Base Voltage 5V
Maximum Collector Base Voltage 60V
Maximum Collector-Emitter Voltage 60V

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