KHB019N20F1
Дополнительная информация
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | 7916F |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220IS |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Package Length (mm) | 10 |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 35nC |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 180@10VmOhm |
| Typical Input Capacitance @ Vds | 900@25VpF |
| Maximum Continuous Drain Current | 19A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.