KSA1010YTU
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PNP BJT Transistor, -100V VCBO, -8A IC, TO-220
Дополнительная информация
PNP Epitaxial Silicon Transistor designed for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 7A and a collector-emitter breakdown voltage of 100V. Offers a minimum DC current gain (hFE) of 40 and a maximum collector-emitter saturation voltage of -600mV. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W. This RoHS compliant component is supplied in a tube of 50 units.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.5mm |
| Height | 18.95mm |
| Length | 9.9mm |
| Weight | 1.8g |
| hFE Min | 40 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Current Rating | -8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 50 |
| Radiation Hardening | No |
| Max Collector Current | 7A |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Collector Base Voltage (VCBO) | -100V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -600mV |
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