KSA1013YTA
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PNP BJT Transistor, 160V, 1A, 50MHz, TO-92
Дополнительная информация
PNP Epitaxial Silicon Transistor for through-hole mounting in a TO-92 package. Features a maximum collector current of 1A and a collector-emitter voltage of 160V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 50MHz. This RoHS compliant component operates within a temperature range of -55°C to 150°C with a power dissipation of 900mW. Supplied in an ammo pack with 2000 units.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.1mm |
| Height | 8.2mm |
| Length | 5.1mm |
| Weight | 0.3711027g |
| hFE Min | 60 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -160V |
| Package Quantity | 2000 |
| Power Dissipation | 900mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 1A |
| Max Power Dissipation | 900mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -6V |
| Collector Base Voltage (VCBO) | -160V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | -1.5V |
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