KSA1156YS
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PNP BJT Transistor, -400V VCEO, 500mA IC, TO-126
Дополнительная информация
PNP Silicon Transistor, TO-126 package, featuring a maximum collector-emitter voltage (VCEO) of 400V and a collector current rating of 500mA. This through-hole component offers a minimum DC current gain (hFE) of 30 and a maximum power dissipation of 1W. Operating across a wide temperature range from -55°C to 150°C, it is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.761g |
| hFE Min | 30 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-126 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -400V |
| Package Quantity | 250 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Collector Base Voltage (VCBO) | -400V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -1V |
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