KSA1220AYS
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Краткое описание:
PNP BJT Transistor, 160V VCBO, 1.2A IC, 175MHz fT, TO-126
Дополнительная информация
PNP Epitaxial Silicon Transistor, TO-126 package, featuring a collector-emitter voltage of 120V and a maximum collector current of 1.2A. This through-hole mounted component offers a transition frequency of 175MHz and a minimum DC current gain (hFE) of 60. It operates within a temperature range of -55°C to 150°C and boasts a maximum power dissipation of 20W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.25mm |
| Height | 11mm |
| Length | 8mm |
| Weight | 0.761g |
| hFE Min | 60 |
| Polarity | PNP |
| Frequency | 175MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-126 |
| Max Frequency | 1MHz |
| Current Rating | -1.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -160V |
| Package Quantity | 250 |
| Power Dissipation | 1.2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 175MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 1.2A |
| Max Power Dissipation | 20W |
| Gain Bandwidth Product | 175MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -160V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -400mV |
