KSA1381ESTU
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PNP BJT Transistor, 300V VCEO, 150MHz fT, TO-126, Through Hole
Дополнительная информация
PNP Epitaxial Silicon Transistor for through-hole mounting in a TO-126 package. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 300V. Offers a minimum hFE of 40 and a transition frequency of 150MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 7W. This RoHS compliant component is supplied in a rail/tube package.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.25mm |
| Height | 11mm |
| Length | 8mm |
| Weight | 0.761g |
| hFE Min | 40 |
| Polarity | PNP |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-126 |
| Max Frequency | 150MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Package Quantity | 60 |
| Power Dissipation | 7W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 7W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -300V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | -600mV |
