KSB1151YS
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PNP BJT Transistor, -60V VCEO, -5A IC, TO-126
Дополнительная информация
PNP Epitaxial Silicon Transistor featuring a TO-126 package for through-hole mounting. This bipolar junction transistor offers a maximum collector current of 5A and a collector-emitter voltage of 60V, with a collector base voltage of -60V. Key specifications include a minimum hFE of 100 and a transition frequency of 3MHz. Operating across a wide temperature range from -55°C to 150°C, this lead-free and RoHS compliant component has a power dissipation of 1.3W.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.761g |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-126 |
| Current Rating | -5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 250 |
| Power Dissipation | 1.3W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 3MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 5A |
| Max Power Dissipation | 1.3W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -140mV |
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