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PNP BJT Transistor, 3A, 30V, 80MHz, TO-126
Дополнительная информация
PNP Epitaxial Silicon Transistor, TO-126 package, featuring a maximum collector current of 3A and a collector-emitter voltage of 30V. This through-hole mounted component offers a transition frequency of 80MHz and a minimum hFE of 60. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 1W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.25mm |
| Height | 11mm |
| Length | 8mm |
| Weight | 0.761g |
| hFE Min | 60 |
| Polarity | PNP |
| Frequency | 80MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-126 |
| Max Frequency | 80MHz |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 60 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 80MHz |
| Max Collector Current | 3A |
| Max Power Dissipation | 10W |
| Gain Bandwidth Product | 80MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -300mV |
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