KSB834WYTM
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Краткое описание:
PNP BJT Transistor, 60V, 3A, 9MHz, TO-263-3, SMT
Дополнительная информация
PNP Epitaxial Silicon Transistor, designed for surface mount applications in a TO-263-3 package. Features a maximum collector current of 3A and a collector-emitter voltage of 60V. Offers a transition frequency of 9MHz and a minimum hFE of 60. Operates within a temperature range of -55°C to 150°C with a power dissipation of 1.5W. This RoHS compliant component is supplied on an 800-REEL.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | KSB834 |
| Weight | 1.31247g |
| hFE Min | 60 |
| Polarity | PNP |
| Frequency | 9MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-263-3 |
| Current Rating | -3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 1 |
| Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Transition Frequency | 9MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 3A |
| Max Power Dissipation | 1.5W |
| Gain Bandwidth Product | 9MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | -7V |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
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