KSB834YTU

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KSB834YTU - Onsemi
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Краткое описание: PNP BJT 60V 3A TO-220 Transistor
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a TO-220 package, featuring a maximum collector current of 3A and a collector-emitter breakdown voltage of 60V. This through-hole mounted component offers a minimum DC current gain (hFE) of 60 and a transition frequency of 9MHz. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 1.5W and is lead-free and RoHS compliant.
RoHS Compliant
Mount Through Hole
Series KSB834
hFE Min 60
Polarity PNP
Frequency 9MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Current Rating -3A
RoHS Compliant Yes
DC Rated Voltage -60V
Package Quantity 50
Power Dissipation 1.5W
Number of Elements 1
Transition Frequency 9MHz
Max Collector Current 3A
Max Power Dissipation 1.5W
Gain Bandwidth Product 9MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -7V
Collector Base Voltage (VCBO) -60V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V

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