KSC1008CYTA
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Краткое описание:
NPN BJT Transistor, 60V VCEO, 700mA IC, 50MHz fT, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, 2000-FNFLD. Features 60V Collector-Emitter Voltage (VCEO) and 700mA Max Collector Current. Offers a 50MHz transition frequency and a minimum hFE of 40. Packaged in a TO-92-3 through-hole mount, this lead-free and RoHS compliant component operates from -55°C to 150°C with 800mW power dissipation.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.93mm |
| Height | 4.7mm |
| Length | 4.7mm |
| Weight | 0.24g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 1MHz |
| Current Rating | 700mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2000 |
| Power Dissipation | 800mW |
| Number of Elements | 1 |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 700mA |
| Max Power Dissipation | 800mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 8V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 200mV |
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