KSC1008YTA
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NPN BJT Transistor, 60V, 700mA, 50MHz, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, 2000-FNFLD. Features 60V Collector-Emitter Voltage (VCEO) and 700mA Max Collector Current. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 50MHz. Packaged in TO-92-3 for through-hole mounting, with a power dissipation of 800mW. Operates across a wide temperature range from -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.24g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Current Rating | 700mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2000 |
| Power Dissipation | 800mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 700mA |
| Max Power Dissipation | 800mW |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 8V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 200mV |
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