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NPN RF Transistor, 600MHz, 20V VCEO, 20mA IC, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor for RF applications. Features a 600MHz transition frequency and 20V collector-emitter breakdown voltage. Continuous collector current rated at 20mA with a maximum power dissipation of 250mW. Housed in a TO-92 package for through-hole mounting. Operates across a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.179g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 600MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 100MHz |
| Current Rating | 20mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 1000 |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Operating Frequency | 600 MHz |
| Radiation Hardening | No |
| Transition Frequency | 600MHz |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 20mA |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 4V |
| Continuous Collector Current | 20mA |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 300mV |
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