KSC2073H2TU
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NPN BJT Transistor, 150V, 1.5A, 4MHz, TO-220
Дополнительная информация
NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 150V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 4MHz. Power dissipation is rated at 25W, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied in a tube.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.8g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 4MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 150V |
| Package Quantity | 50 |
| Power Dissipation | 25W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 4MHz |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 25W |
| Gain Bandwidth Product | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 1V |
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