KSC2334Y
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NPN BJT | 100V VCEO | 7A IC | TO-220
Дополнительная информация
NPN Epitaxial Silicon Transistor, 1200-BLKBG, designed for through-hole mounting in a TO-220-3 package. Features a 100V Collector-Emitter Voltage (VCEO) and a 7A maximum collector current. Offers a minimum hFE of 40 and a maximum Collector Emitter Saturation Voltage of 600mV. Operates within a temperature range of -55°C to 150°C with a power dissipation of 1.5W. This component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.8g |
| hFE Min | 40 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-220-3 |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 200 |
| Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 7A |
| Max Power Dissipation | 1.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 150V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 600mV |
