KSC2383YTA
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NPN BJT Transistor, 160V, 1A, TO-92, 100MHz
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-92 package, 160V Collector-Emitter Voltage (VCEO) and Collector Base Voltage (VCBO). Features 1A Max Collector Current, 1.5V Collector Emitter Saturation Voltage, and a minimum hFE of 60. Operates with a 6V Emitter-Base Voltage (VEBO) and offers a transition frequency of 100MHz. This through-hole component is RoHS compliant, lead-free, and rated for a maximum power dissipation of 900mW.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.9mm |
| Height | 8mm |
| Length | 4.9mm |
| Weight | 0.3711027g |
| hFE Min | 60 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 160V |
| Package Quantity | 2000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 1A |
| Max Power Dissipation | 900mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 160V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | 1.5V |
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