KSC945CYTA
Производится
Увеличить
Краткое описание:
NPN BJT Transistor | 50V VCEO | 150mA IC | 300MHz fT | TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 50V Collector-Emitter Voltage (VCEO) and 150mA Max Collector Current. This bipolar junction transistor offers a 300MHz transition frequency and a minimum hFE of 40. Packaged in a TO-92 through-hole mount, it operates from -55°C to 150°C with a 250mW power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.24g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | 150mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 2000 |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 250mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
