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NPN BJT Transistor, 60V, 7A, TO-220
Дополнительная информация
NPN Epitaxial Silicon Transistor featuring a TO-220-3 package for through-hole mounting. This bipolar junction transistor offers a maximum collector current of 7A and a collector-emitter voltage (VCEO) of 60V, with a collector base voltage (VCBO) of 100V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. The transistor boasts a minimum hFE of 40 and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 2.27g |
| hFE Min | 40 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Current Rating | 7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 7A |
| Max Power Dissipation | 2W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
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