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NPN BJT Transistor, 60V, 1A, 160MHz, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, 2000-FNFLD. Features 60V Collector Emitter Breakdown Voltage (VCEO) and 1A Max Collector Current. Offers a minimum DC current gain (hFE) of 135 and a transition frequency of 160MHz. Packaged in a TO-92-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C with 750mW power dissipation.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.24g |
| hFE Min | 135 |
| Polarity | NPN |
| Frequency | 160MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Max Frequency | 1MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 2000 |
| Power Dissipation | 750mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 160MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Power Dissipation | 750mW |
| Gain Bandwidth Product | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 120V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 300mV |
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