KSD363YTU
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Краткое описание:
NPN BJT Transistor, 120V VCEO, 6A IC, 40W PD, TO-220
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-220 package, featuring a 120V collector-emitter breakdown voltage and 6A continuous collector current. This through-hole mounted component offers a 10MHz transition frequency and a minimum DC current gain (hFE) of 40. Designed for operation between -55°C and 150°C, it has a maximum power dissipation of 40W and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 1.8g |
| hFE Min | 40 |
| Polarity | NPN |
| Frequency | 10MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220 |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 120V |
| Package Quantity | 50 |
| Power Dissipation | 40W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 10MHz |
| Max Collector Current | 6A |
| Max Power Dissipation | 40W |
| Gain Bandwidth Product | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 8V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
