KSD471ACYBU
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Краткое описание:
NPN BJT Transistor, 30V VCEO, 1A IC, 130MHz fT, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 30V Collector-Emitter Voltage (VCEO) and 1A Max Collector Current. This bipolar junction transistor offers a 130MHz transition frequency and a minimum hFE of 120. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 800mW. The component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Series | KSD471 |
| Weight | 0.179g |
| hFE Min | 120 |
| Polarity | NPN |
| Frequency | 130MHz |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92 |
| Max Frequency | 1MHz |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1000 |
| Power Dissipation | 800mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 130MHz |
| Max Collector Current | 1A |
| Max Power Dissipation | 800mW |
| Gain Bandwidth Product | 130MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
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